Power

MOSFET provides industry's lowest RDS(ON) in 2x2mm footprint

28th March 2014
Nat Bowers

Saving space and claiming to increase power efficiency in portable electronics, the SiA936EDJ TrenchFET power MOSFET has been announced by Vishay. The manufacturer claims that the dual n-channel MOSFET features the industry's lowest on-resistance RDS(ON) for 20V (12 and 8VGS) devices at 4.5 and 2.5V gate drives in a 2x2mm footprint.

The MOSFET is suitable for load and charger switches, DC/DC converters, and H-bridges and battery protection for power management in smartphones, tablet PCs, mobile computing devices, non-implantable portable healthcare products, and handheld consumer electronics with small brushless DC motors.

In these applications, the dual-channel MOSFET provides low RDS(ON) of 34mΩ at 4.5V, 37mΩ at 3.7V, and 45mΩ at 2.5 V. Its on-resistance, at 2.5V, is 11.7% lower than the closest competing 8VGS device and 15.1% lower than the closest competing 12VGS device. This low on-resistance enables lower voltage drops, more efficient use of power and longer battery run times.

By integrating two MOSFETs into one compact, thermally enhanced PowerPAK SC-70 package, the SiA936EDJ can simplify design, lower overall component count, and save critical PCB space. The MOSFET is 100% Rg-tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS Directive 2011/65/EU. It also features built-in ESD protection of 2000V.

The dual n-channel TrenchFET power MOSFET is available now for sampling and in production quantities, with lead times of 12-14 weeks for larger orders. 

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