Power

MOSFET packages save space and raise charger performance

30th April 2009
ES Admin
For charging and switching applications in portable devices, Diodes Incorporated has introduced dual device combinations in thermally efficient ultra small DFN packaging. The DMS2220LFDB and DMS2120LFWB co-package a 20V P-channel enhancement mode MOSFET with a companion diode in a choice of 2mmx2mm DFN2020 and 3mmx2mm DFN3020 packages. The DMP2160UFDB, co-packages two of the same MOSFETs in the DFN2020 format.
Compared to larger 3mmx3mm footprint packages traditionally used in portable application designs, the DFN2020 takes 55% less PCB space, and with an off-board height of just 0.5mm the package is also 50% thinner, suiting next generation product design. The MOSFETs used in these packages feature low gate charge and a typical RDS(ON), of 86mΩ at VGS of 1.8V, ensuring both switching and on state losses are minimised.

To further help improve efficiency, the type of diode employed in these packages is Diodes’ own high performance Super Barrier Rectifier (SBR). With a typical low forward voltage of just 0.42V, the SBR offers a significant reduction in power dissipation compared to conventional Schottky diodes.

In 10k piece quantities, the dual MOSFET DMP2160UFDB is priced at US $0.08 and the MOSFET/SBR combination DMS2220LFDB and DMS2120LFWB at US $0.075 and US $0.070 respectively.

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