MOSFET offers RDS(ON) of 3.5mΩ in 3mm x 3mm package
A -30V p-channel TrenchFET Gen IV power MOSFET that offers on-resistance of 3.5mΩ at 10V in the 3.3mm by 3.3mm thermally enhanced PowerPAK 1212-8S package has been introduced by Vishay Intertechnology.
The MOSFET enables on-resistance times gate charge — a critical figure of merit (FOM) for MOSFETs used in switching applications — of 172mΩ*nC.
Purpose-built to increase power density, the space-saving Vishay Siliconix SiSS05DN is 65% smaller than devices with similar on-resistance in 6 mm by 5mm packages.
The on-resistance of the MOSFET is 26% lower than the previous-generation solution and 35 % lower than the next best product on the market, and its FOM is 15 % lower than the closest competing device.
These values result in reduced conduction and switching losses to save energy and increase battery run times in portable electronics while minimising voltage drops across the power path to prevent false triggering.
The device's compact form factor is easier to fit into designs with limited PCB real estate.
With its industry-standard footprint size, the SiSS05DN provides a drop-in upgrade to existing parts in applications utilising 5V to 20V input rails.
The MOSFET is ideal for adapter and load switches; reverse polarity protection; and motor drive control in battery-powered devices, battery chargers, consumer electronics, computers, telecom equipment, and more.
The device is 100% RG- and UIS-tested, RoHS-compliant, and halogen-free.
Samples and production quantities of the SiSS05DN are available now, with lead times of 12 weeks subject to market conditions.
Product Spotlight
APV1111GVY
Panasonic
Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
| SKU: | |
|---|---|
| Stock: | 3490 |
| Cost: | $3.95 |
