MOSFET integrated with Schottky Diode in one package

6th July 2020
Mick Elliott

The Vishay Siliconix 30V N-Channel MOSFET Half-Bridge Power Stage with Integrated Schottky Diode is in stock at New Yorker Electronics.

This new device combines a high side TrenchFET MOSFET and low side SkyFET MOSFET with a monolithically integrated Schottky diode in one compact package.

Designed for power conversion in computing and telecom applications, the MOSFET delivers increased power density and efficiency, while reducing component counts.

This compact PowerPAIR 3.3mm x 3.3mm package is 65% smaller than typical 6mm x 5mm packages with similar on-resistance for power conversion.

A unique pin configuration and construction delivers up to 11% higher output current per current phase than competing products in the same footprint area, in addition to higher efficiency for output current above 20A.

This pin configuration and large PGND pad enhance thermal transfer, optimise the electrical path and enable a simplified PCB layout.

They are ideal for point-of-load (POL) conversion and power supplies, as well as synchronous buck and DC/DC converters for graphic and accelerator cards, computers, servers and telecom and RF networking equipment.

This series is designed for fast switching with a low gate charge of 6.9 nC (Channel 1) and 19.4 nC (Channel 2).

The Vishay MOSFETs are 100% Rg- and UIS-tested, RoHS-compliant and halogen-free.

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