The on-resistance of the Si7157DP allows designers to achieve lower voltage drops and conduction losses in their circuits, enabling more efficient use of power and longer battery run times — especially in peak load conditions. The device’s compact 6.15mm by 5.15mm PowerPAK SO-8 package footprint area saves valuable PCB space. Further to this, the device’s lower voltage drop at peak currents also provides a larger voltage margin over the UVLO (undervoltage lockout) level, helping prevent undesired undervoltage lockout conditions with the load.
100% Rg- and UIS-tested, the MOSFET is halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU. Like other Vishay Siliconix p-channel Gen III MOSFETs, the Si7157DP is built on the latest process technology that packs one billion transistor cells into each square inch of silicon.
