The MOSFET is useful for automotive power switching applications. In these designs its tighter Vth specification could contribute to a dead time reduction in half-/H-/B6-bridge schemes. This is because the max Vth difference between low-side MOSFET and high-side MOSFET is smaller.
In applications where MOSFETs are connected in parallel, a tighter Vth spec leads to improved synchronous switching among paralleled MOSFETs. As a result, the switching loss will be distributed more evenly among the MOSFETs. If a single MOSFET turns on earlier or turns off later than other MOSFETs in parallel, the switching loss concentrates on this single MOSFET.
Toshiba’s UMOS VIII-H semiconductor process has been used in the TK160F10N1L. U-MOS VIII-H has a switching ripple suppression capability and can contribute to EMI noise reduction. Target applications for the MOSFET include automotive motors in 48V systems, DC/DC converters and load switches.
The TK160F10N1L is supplied in a TO-220SM(W) package, has a maximum on-resistance (RDS(ON)) rating of 2.4mΩ and will conform with AEC-Q101 automotive level qualification requirements.
