The 50MHz half-bridge driver designed to work with enhancement mode GaN FETs up to 200V. Engineered for maximum performance and highly efficient operation, it features an ultra-fast propagation delay of 10ns, which is faster than traditional silicon half-bridge drivers.
A low switch-node capacitance of 1pF with user-adjustable dead time control helps improve efficiency by allowing designers to optimise dead-time within their system.
The device offers 3.4ns high-side–to–low-side delay matching, a minimum pulse width of 4ns, and an internal LDO that ensures a gate-drive voltage of 5 V regardless of supply voltage.
The driver also includes a common-mode transient immunity (CMTI) of more than 300 V/ns — one of the industry’s highest — which enables high system-noise immunity.
A broad range of applications is covered, including high-speed DC/DC converters, motor control, Class-D audio amplifiers, Class-E wireless charging, RF envelope tracking, and other power-conversion applications.