MOSFET features low gate charge of 22.5nC
A 60V TrenchFET Gen IV n-channel power MOSFET has been introduced by Vishay Intertechnology. It is optimised for standard gate drives to deliver maximum on-resistance down to 4mΩ at 10V in the thermally enhanced 3.3mm by 3.3mm PowerPAK 1212-8S package.
Designed to increase efficiency and power density in switching topologies, the Vishay Siliconix SiSS22DN features a low gate charge of 22.5nC along with low output charge (QOSS).
Unlike logic-level 60V devices, the typical VGS(th) and Miller plateau voltage of the SiSS22DN are enhanced for circuits with gate drive voltages above 6V, where the device provides optimised dynamic characteristics that enable short dead-times and prevent shoot-through in synchronous rectifier applications.
The SiSS22DN's industry-low on-resistance is 4.8% lower than the next best product — and rivals the leading logic-level device — while its QOSS of 34.2nC results in the best in class QOSS times on-resistance, a critical figure of merit (FOM) for MOSFETs used in power conversion designs employing zero voltage switching (ZVS) or switch-tank topology.
To achieve higher power density, the device utilizes 65% less PCB space than similar solutions in 6mm by 5mm packages.
The MOSFET’s specifications are fine-tuned to minimise conduction and switching losses simultaneously.
This results in increased efficiency that can be realised in multiple power management system building blocks, including synchronous rectification in AC/DC and DC/DC topologies; primary-side switching in DC/DC converters, half-bridge MOSFET power stages in buck-boost converters, and OR-ing functionality in telecom and server power supplies; motor drive control and circuit protection in power tools and industrial equipment; and battery protection and charging in battery management modules.
The MOSFET is 100% RG- and UIS-tested, RoHS-compliant, and halogen-free.
Samples and production quantities of the SiSS22DN are available now, with lead times of 30 weeks subject to market conditions.