MOSFET features low gate charge of 22.5nC

Designed to increase efficiency and power density in switching topologies, the Vishay Siliconix SiSS22DN features a low gate charge of 22.5nC along with low output charge (Q_OSS).

Unlike logic-level 60V devices, the typical V_GS(th) and Miller plateau voltage of the SiSS22DN are enhanced for circuits with gate drive voltages above 6V, where the device provides optimised dynamic characteristics that enable short dead-times and prevent shoot-through in synchronous rectifier applications.

The SiSS22DN's industry-low on-resistance is 4.8% lower than the next best product — and rivals the leading logic-level device — while its Q_OSS of 34.2nC results in the best in class Q_OSS times on-resistance, a critical figure of merit (FOM) for MOSFETs used in power conversion designs employing zero voltage switching (ZVS) or switch-tank topology.

To achieve higher power density, the device utilizes 65% less PCB space than similar solutions in 6mm by 5mm packages.

The MOSFET’s specifications are fine-tuned to minimise conduction and switching losses simultaneously.

This results in increased efficiency that can be realised in multiple power management system building blocks, including synchronous rectification in AC/DC and DC/DC topologies; primary-side switching in DC/DC converters, half-bridge MOSFET power stages in buck-boost converters, and OR-ing functionality in telecom and server power supplies; motor drive control and circuit protection in power tools and industrial equipment; and battery protection and charging in battery management modules.

The MOSFET is 100% R_G- and UIS-tested, RoHS-compliant, and halogen-free.

Samples and production quantities of the SiSS22DN are available now, with lead times of 30 weeks subject to market conditions.