/>
Optimized for the low-side control switch in synchronous rectification for high-current dc-to-dc converters, VRM applications, graphics cards, and point-of-load in servers and telecom systems, the new SiE726DF offers exceptionally low on-resistance of 0.0024Ω maximum at a 10-V gate drive (0.0033Ω maximum at 4.5V), and can handle current levels 50% higher than the SO-8 in the same footprint size, without a heatsink. The device provides a typical gate charge of 50nC, with a low Qgd/Qgs ratio to help prevent shoot-through.

With a Qrr of 30nC and VSD of 0.37V — both of which are more than 50% lower than that of a standard MOSFET — the SiE726DF integrated MOSFET and Schottky diode increases efficiency due to less parasitics and reduced power losses linked to the body diode of the MOSFET. As switching frequencies increase, the reduction in power loss becomes even more dramatic. In addition, the elimination of the external Schottky diode allows designers to create smaller, more compact circuit designs while reducing costs.

The double-sided cooling provided by the PolarPAK package enables better thermal performance for high-current applications. This allows for operation with a lower junction temperature with a thermal resistance of 1°C/W top and 1°C/W bottom. Its leadframe-based, encapsulated design also offers increased protection and reliability, in addition to simplifying manufacturing, since the die is not exposed. The device offers the same layout regardless of die size for easier PCB design, and is 100% Rg and UIS tested.