All data is taken with the chips connected via two 0.02mm wire bonds measuring 0.31mm in length. Based on a GaAs pseudomorphic High-Electron Mobility Transistor (pHEMT) design, the HMC1126 and HMC1127 are suitable for instrumentation, microwave radio and VSAT antennas, aerospace and defence systems, telecomms infrastructure, and fibre optic applications.
The HMC1126 and HMC1127 respectively offer P1dB output power of 17.5 and 12.5dBm, Psat output power of 21 and 17.5dBm, gain of 11 and 14.5dB, and output IP3 of 28 and 23dBm. The components run off supply voltages of +5V, at 80 (HMC1126) and 65mA (HMC1127). HMC1126 is packaged in a 2.3×1.45×0.1mm die, whilst the HMC1127 features dimensions of 2.7×1.45×0.1mm.
Both devices are available in sample and production quantities now, with prices starting from $103 (HMC1126) and $113 (HMC1127) in 1,000-unit quantities.