Power

Microsite focuses on GaN/SiC technologies

5th April 2019
Mick Elliott

Richardson RFPD has launched GaN & SiC for Power Electronics Tech Hub, a microsite featuring the latest news on gallium nitride (GaN) and silicon carbide (SiC) innovations, news and product releases. The microsite offers a robust library of GaN and SiC new product features and technical resources, including white papers and videos, as well as links to online purchasing and the option to sign-up for product updates via email.

Silicon carbide (SiC) offers significant advantages in high-power, high-voltage applications where power density, higher performance and reliability are of the utmost importance.

Solar inverters, welding, plasma cutters, fast vehicle chargers and oil exploration are a few examples of industrial applications that benefit from the higher breakdown field strength and improved thermal conductivity that SiC offers over silicon (Si) material. 

Gallium nitride, a wide band gap semiconductor, is rapidly displacing silicon as the material of choice for power transistors.

With superior material properties and simplicity of use, GaN technology allows designers to set new standards for efficiency, power density, size and weight. 

The GaN & SiC for Power Electronics Tech Hub is the latest in Richardson RFPD's selection of Tech Hubs.

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