Isolated gate driver maximises SiC switch benefits

8th January 2014
Staff Reporter

Driving high efficiency Silicon Carbide (SiC) and traditional silicon power switches, HADES is a 2nd generation isolated gate driver chipset. CISSOID's latest offering aims to maximise the benefits of the newest Silicon Carbide (SiC) power switches. To accomplish this, increased switching frequencies translate into dramatic reduction of the size & weight of the passive & magnetic components; while faster switching times lead to increased energy efficiency of the converters or motor drivers.


HADES also has high temperature capability, which allows users to locate the driver next to the power switches, hence minimizing parasitic inductances and their negative impact on efficiency. The chipset also addresses the distinct needs of very high-temperature applications (e.g.  225°C normal operation), as well as of lower temperatures (100~175°C) together with unrivalled silicon lifetime (different temperature flavours will be available to address distinct needs). The chipset enables turnkey gate driver modules and Intelligent Power Modules by bringing the highest integration level for miniaturization of the gate driver function.

CISSOID claims that HADES is poised to outperform any gate driver solution on the market for all its merit factors. It has been optimized to meet the requirements of large-volume, cost sensitive applications, including industrial and automotive, for any system running above 100°C.

HADES Gen2 will remain backward compatible with the former generation of HADES (CISSOID’s current reference design based on their THEMIS, ATLAS and RHEA chips). This second generation will provide a more integrated solution, resulting in a dramatic improvement of compactness. Special attention has been brought to support of a wide range of SiC power switches currently available, including MOSFETs, JFETs and BJTs.

Tony Denayer, CEO at CISSOID explained: “In 2011, we were first on the market with HADESÒ, the first isolated gate driver solution dedicated to Silicon carbide (SiC) fast-switching power devices. Market acceptance has been tremendous and a number of customers addressing a large span of applications did validate their design at technology level with our chipset. For their large-scale deployments, they are now expecting us to come up with a more integrated version for use into hybrid modules or traditional PCB final designs. HADES V2 will be introduced by mid-2014: It will dramatically reduce the number of chips in a full 1200V half bridge topology, while bringing ultimate reliability”. Mr Denayer added “For example a motor drive inverter with a mission profile up to 125°C will reach an expected lifetime of 30 years and more – figures that cannot be achieved with traditional solutions today”.  

CISSOID will use the HADES V2 chipset to offer a turnkey module version of its gate driver in a reliable hermetic module that will greatly facilitate implementations of power converters with 225°C rating.


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