IR’s New 1200V IGBTs Deliver Higher Power Density and Increased Efficiency

International Rectifier today introduced a family of rugged 1200V ultra-fast insulated-gate bipolar transistors optimized for industrial motor drive and UPS systems. The new devices leverage IR’s field stop trench ultra-thin wafer technology that delivers lower conduction and switching losses.

Co-packaged with a soft recovery low Qrr diode and featuring a 10us minimum short circuit time rating, the devices are optimized for rugged industrial applications.

“These new 1200V trench IGBTs feature very low Vce(on) and low switching losses while offering higher system efficiency and rugged transient performance for increased reliability making them well suited to harsh industrial environments,” said Llewellyn Vaughan-Edmunds, IGBT Product Marketing Manager, IR’s Energy Saving Products Business Unit.

The packaged devices cover a broad current range from 10 – 50A. Other key performance benefits include Tjmax of 175°C, positive VCE(on) temperature coefficient for easy paralleling and low VCE(on) to reduce power dissipation and achieve higher power density. Die products are also available.

Keep Up to Date with the Most Important News

By pressing the Subscribe button, you confirm that you have read and are agreeing to our Privacy Policy and Terms of Use
Previous Post

TowerJazz and Cavendish Kinetics Collaborate to Deliver High Volume Tunable RF MEMS Products

Next Post

How To Debug Dead Boards In Production