The new power MOSFETs featuring IR’s latest silicon technology are the company’s first devices available in a 5x6mm PQFN package with optimized copper clip and solder die. The IRFH6200TRPbF 20V device delivers industry leading RDS(on) of only 1.2 mOhm (max.) at 4.5V Vgs to significantly cut conduction losses for DC motor drive applications such as hand tools.
“With a rich heritage and ongoing commitment to benchmark MOSFET technology, IR continues to blaze the trail in superior performance with the introduction of a family of MOSFETs that combines our latest generation silicon with PQFN packaging technology to deliver industry leading RDS(on),” said Doug Russell, vice president, IR’s Power Management Devices Business Unit. “Moreover, our product roadmap will deliver an expansive portfolio of PQFN benchmark MOSFETs over the coming months in response to customer requirements,” he added.
The 25V IRFH5250TRPbF and 30V IRFH53xxTRPbF devices are designed for DC switch applications such as active ORing and DC motor drive applications requiring high current carrying capability and high efficiency. The IRFH5250TRPbF features ultra low RDS(on) of 1.15 mOhm (max.) combined with just 52 nC gate charge (Qg) while the IRFH5300TRPbF delivers RDS(on) of only 1.4 mOhm (max.) combined with only 50 nC Qg.
In addition to achieving excellent thermal performance, as a result of using the IRFH6200TRPbF, IRFH5250TRPbF and IRFH53xxTRPbF, board space and cost are reduced compared to existing solutions as fewer parts are required for a given power loss.
All of the devices feature low thermal resistance (<0.5°C/W), are MSL1 industrial-qualified and RoHS compliant containing no lead, bromide or halogen.