1200V IGBTs use trench gate field stop technology

12th November 2014
Caroline Hayes

IGBTs from International Rectifier use the company’s trench gate field stop technology. The Generation 8 (Gen8) 1200V IGBTs are delivered in industry standard TO-247 packages. The six devices are available with current ratings from 8A (IRG8P08N120KD) up to 60A (IRG8P60N120KD) with typical VCE(ON) of 1.7V and a short-circuit rating of 10µs.

The reduction in power dissipation results in increased power density and superior robustness, says the company.

The technology offers softer turn-off characteristics ideal for motor drive applications, minimising dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. A narrow distribution of parameters offers current sharing when paralleling multiple IGBTs. The thin wafer technology improves thermal resistance and maximum junction temperature up to 175°C.

Pricing for the IRG8P08120KD begins at $3.05 in 10,000 unit quantities. Production orders are available immediately. The devices are RoHS compliant.

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