The reduction in power dissipation results in increased power density and superior robustness, says the company.
The technology offers softer turn-off characteristics ideal for motor drive applications, minimising dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. A narrow distribution of parameters offers current sharing when paralleling multiple IGBTs. The thin wafer technology improves thermal resistance and maximum junction temperature up to 175°C.
Pricing for the IRG8P08120KD begins at $3.05 in 10,000 unit quantities. Production orders are available immediately. The devices are RoHS compliant.
