IR Introduces Family of Robust Automotive-qualified MOSFETs Optimized to Deliver Low On-State Resistance

The new devices, built on IR’s proven Gen 10.2 technology, deliver on-state resistance as low as 1.0 mOhm RDS(on) (maximum), and are available across a range of voltages from 24V to 100V in a variety of Surface Mount Device (SMD) and through-hole packages. Several of the devices feature revised maximum current ratings of up to 240A in a D2Pak-7P and 195A in a D2Pak.

IR’s automotive MOSFETs are subject to dynamic and static part average testing combined with 100 percent automated wafer level visual inspection as part of IR’s automotive quality initiative targeting zero defects. AEC-Q101 qualification requires that there is no more than a 20 percent change in RDS(on) after 1,000 temperature cycles of testing. However, in extended testing, IR’s new AU Bill of Materials demonstrated a maximum RDS(on) shift of less than 10 percent at 5,000 temperature cycles, showing the strength and ruggedness of the Bill of Materials.

The new devices are qualified according to AEC-Q101 standards and feature an environmentally friendly, lead-free and RoHS compliant Bill of Materials.