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Infineon`s 650V CoolMOS CFD2 Technology with Integrated Fast Body Diode Said to Take Energy Efficiency in Applications like Servers, Solar, Telecom SMPS and Lighting to the Next Level

23rd May 2011

Infineon Technologies AG

ES Admin

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With its latest generation of high-voltage CoolMOS MOSFETs Infineon is rolling out another innovation setting new standards in the field of energy efficiency. At the PCIM Europe 2011 (May 17-19) in Nuremberg, Germany, Infineon presents the new 650V CoolMOS™ CFD2 – the world`s first high-voltage transistor with both a drain-source voltage of 650V and an integrated fast body diode. The new CFD2 devices succeed the 600V CFD products, enabling not only improved energy efficiency but also softer commutation behavior and therefore reduced EMI (electromagnetic interference) giving these products a clear competitive advantage.

The 650V CoolMOS CFD2 technology combines the benefits of fast switching Superjunction MOSFETs like better light load efficiency, reduced gate charge, easy implementation and outstanding reliability. Furthermore, it provides lower area specific on-resistance and reduced capacitive switching losses while offering easy control of switching behavior as well as the highest body diode ruggedness in the market. The new CoolMOS™ CFD2 technology also offers lower system costs compared to its predecessing 600V CFD and is overall the best choice for resonant switching topologies.

Infineon expects the greatest market potential for the 650V CoolMOS™ CFD2 to be in solar power inverters, servers, lighting and telecommunication switched-mode power supply (SMPS).

“With our revolutionary CoolMOS™ technology Infineon has become the market leader in energy efficiency and power density. The 650V CFD2 technology complements the CoolMOS™ product family and sets new standards by for example increasing the efficiency of photovoltaic inverters up to 98.1 percent,” says Jan-Willem Reynaerts, Product Line Manager HV MOS at Infineon Technologies.