The modules can be configured as a half-bridge (single IMS module) or a full-bridge (two IMS modules) on the high-power motherboard.
The IMS evaluation modules are available in two power levels, the 3kW GSP65R25HB-EVB and the 6kW GSP65R13HB-EVB. The modules include GaN E-HEMTs, gate drivers, an isolated DC/DC supply, DC bus decoupling capacitors, and a heatsink to form a fully-functional, half-bridge power stage.
The new platform provides a flexible, low-cost, high-power development platform for high-efficiency power systems with 3 kW or higher applications.
In combination with GaNPX packaging technology and smart design techniques, it enables power engineers to quickly take full advantage of GaN power transistors in designing smaller, lighter, lower cost, and more efficient power systems for data center, automotive, and energy storage system applications.
Additional key features of the new IMS evaluation platform include low thermal resistance and optimised layout. The modules can be used independently as a high-power GaN intelligent power module with developers’ own system boards for in-system prototyping
