IGBT power modules provide easy thermal management

The VS-ENQ030L120S, VS-ETF075Y60U, VS-ETF150Y65U and VS-ETL015Y120H modules are suitable for inverters based on 3-level neutral point clamp topologies and interleaved multiple-channel maximum power point tracking boost converters.The VS-ENQ030L120S provides a collector-to-emitter breakdown voltage of 1200V and a collector current rating of 30A.Operating to a temperature of +175°C, the VS-ETF075Y60U and VS-ETF150Y65U are suitable for 3-level inverter stages, offering 75 and 150A collector current ratings and 600 and 650V collector-to-emitter breakdown voltages, respectively.

The 15A VS-ETL015Y120H, which is designed for double boost converters, provides a collector-to-emitter breakdown voltage of 1200V. High-efficiency silicon boost diodes, integrated 62A bypass diodes and panel short-circuit full-current reverse polarity protection diodes are also featured. To suit higher power level applications, the modules feature a modular and scalable design.

For easy PCB mounting and low thermal resistance, the devices feature pressfit technology and an exposed DBC substrate. The VS-ENQ030L120S is offered in a EMIPAK-1B package, while the VS-ETF075Y60U, VS-ETF150Y65U and VS-ETL015Y120H are offered in a EMIPAK-2B package. Offering operating frequencies up to 20kHz, the modules provide low internal inductance and switching losses. The layout of the modules is designed to minimise stray parameters for improved EMI performance. The  RoHS-compliant devices, which are UL-approved file E78996 (approval pending for the VS-ENQ030L120S), can be customised on request.