Higher efficiency for EV DC charging and other industrial applications
It has been announced that Infineon Technologies is extending the CoolSiC Schottky 1,200V G5 diode portfolio with the release of a TO247-2 package. It can easily replace silicon diodes for higher efficiency. The expanded 8.7mm creepage and clearance distances offer extra safety in high-pollution environments.
Forward currents up to 40A are available to address EV DC charging, solar energy systems, uninterruptible power supply (UPS) and other industrial applications.
Used in combination with silicon IGBT or super-junction MOSFET, the CoolSiC Schottky 1,200V G5 diode raises efficiency up to one percent compared to when a silicon diode is used. For example, for a Vienna rectifier stage or PFC boost stage used in three phase conversion systems. The output power of the PFC and DC-DC stages can thus be substantially increased by 40% or more.
Other than negligible reverse recovery losses, the signature feature of SiC Schottkys, the CoolSiC Schottky 1,200V G5 diode portfolio comes with best-in-class forward voltage (V F) as well as the slightest increase of V F with temperature and highest surge current capability. This results in a portfolio delivering market-leading efficiency and more system reliability at an attractive price point.
Thanks to its superior efficiency, CoolSiC Schottky 1,200V G5 diode with a ten amp rating can serve as a drop-in replacement for a 30A silicon diode.
The CoolSiC Schottky 1,200V G5 diode portfolio in a TO247-2 pin package can be ordered now in five current classes: 10, 15, 20, 30, 40A.