In addition, 77% lower switching loss vs. conventional IGBT modules enables high-frequency operation, contributing to smaller cooling countermeasures and peripheral components.
In March 2012, ROHM began mass production of the world’s first full SiC power module with an integrated power semiconductor element composed entirely of silicon carbide, and its 120A and 180A/1200V products continue to see increased adoption in the industrial and power sectors. And although further increases in current are expected due to energy-saving effects, in order to take advantage of the high-speed switching capability of SiC products an entirely new package design was needed that can minimise the effects of surge voltage during switching which can become particularly problematic at higher currents.
In response, the BSM300D12P2E001 features an optimised chip layout and module construction that significantly reduces internal inductance, suppressing surge voltage while enabling support for higher current operation up to 300A. And going forward ROHM will continue to strengthen its line-ups by developing products compatible with larger currents that incorporate SiC devices utilising high voltage modules and trench structures.
Samples of the BSM300D12P2E001 are currently available from ROHM.
