IDT Chosen as the Main Advanced Memory Buffer Supplier for Elpida FB-DIMM Products
High-Performance Power MOSFET from Fairchild Optimizes Low-Voltage Power Management Applications
Teseq – the New Name for Schaffner Test Systems

High-Performance Power MOSFET from Fairchild Optimizes Low-Voltage Power Management Applications

Fairchild Semiconductor has introduced the FDZ191P, said to be the industry’s smallest footprint P-channel MOSFET offering the optimal thermal and electrical performance necessary for power conversion, charging and load management in an array of low-voltage (

Fairchild’s FDZ191P offers performance superior to the majority of power MOSFETs on the market designed for low-voltage applications. As a PowerTrench MOSFET, the FDZ191P utilizes Fairchild’s latest wafer-level chip scale package (WL-CSP), enabling excellent thermal resistance (83C/W) and low RDS(on) (67mOhms at 4.5V). Available in an ultra-small (1.0mm x 1.5mm x 0.65mm) package, the FDZ191P reduces board space by at least 30 percent compared to similar components, and its 0.65mm maximum package height makes it well suited to high-density products and ultra-thin consumer product designs. It is also capable of operating down to 1.5V, an important feature in power-management designs. Additionally, the FDZ191P meets all “green” and RoHS standards required by electronic applications worldwide.

“Fairchild’s FDZ191P is setting the bar for the ultra-small, high-performance MOSFET market and exemplifies Fairchild’s expertise in developing leading-edge packaging technology combined with high-density MOSFET silicon,” said Chris Winkler, marketing director, Low-Voltage Power Segment. “Fairchild’s growing family of products in 1.0mm by 1.5mm WL-CSP packaging offers designers ideal solutions for meeting the space and power-management circuit challenges presented by low-voltage designs.”

This lead (Pb)-free device meets or exceeds the requirements of the joint IPC/JEDEC standard J-STD-020C and is compliant with European Union regulations now in effect.

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