Half-bridge power circuit leverages GaN properties

The JEDEC-certified WI62120, a 650V enhancement mode GaN-on-silicon integrated circuit, is part of Wise-integration’s WiseGan family of power devices.

It leverages the intrinsic properties of GaN to provide improved current capabilities, voltage breakdown, and switching frequencies for applications in high-efficiency and high-density power conversion, including AC/DC, DC/DC, and DC/AC, from 30W to 3kW.

Target market sectors include consumer (such as ultra-fast chargers for mobile and desktop devices), E-mobility, and industrial AC/DC power supplies and designs utilizing Bridgeless Totem Pole power factor conversion (PFC) active clamp flyback (ACF), two-inductor one-capacitor (LLC) resonant converters, and synchronous buck or boost half-bridge topologies.

“We are proud to bring our first WiseGanproduct release into production,” said Thierry Bouchet, CEO of Wise-integration. “The 120 mOhm WI62120 is the most compact half bridge in the market with a 6x8 PQFN package that maximises customer benefits in terms of high power density, performance, and bill of materials cost reduction. We’re confident that our customers will find it very useful in all ACF topologies and PFC-LCC architectures, and that it will help them leverage the benefits provided by smaller, more-efficient, and more cost-effective power electronics."

Gallium nitride (GaN) is a wide-bandgap, next-generation semiconductor technology that has become key for development of advanced power electronics. It operates up to 20x faster than silicon and provides up to 3x the power or 3x the charge in half the size and weight of silicon devices.

Wise-integration extends these advantages with WiseWare embedded digital control software; subsequent generations of WiseGan devices will integrate functions such as gate control, protection, security, and other designer-friendly capabilities into AC/DC GaN applications.