Power

Half bridge driver optimised for asymmetrical topologies

29th April 2021
Mick Elliott

STMicroelectronics has extended the MasterGaN family with the introduction of a high power density 600V half bridge driver with two enhancement mode GaN devices optimised for asymmetrical topologies.

An evaluation board and samples available from Anglia Components.

Building upon the advantages of STMicroelectronics' MasterGaN platform, MasterGaN2 is the first in the new family to contain two asymmetric gallium-nitride (GaN) transistors, delivering an integrated GaN solution suited to soft-switching and active-rectification converter topologies making MasterGaN2 perfect for active clamp flyback circuits up to 65W.

The MasterGaN power system-in-package (SiP) family combines the two GaN High-Electron-Mobility Transistors (HEMTs) and associated high-voltage gate drivers in the same package with all necessary protection mechanisms built-in and allows designers to easily connect external devices including Hall sensors and a controller such as a DSP, FPGA, or microcontroller directly to the MasterGaN device.

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