HADES has been designed to drive seamlessly Silicon Carbide (SiC) power transistors, which have low switching losses. HADES can switch them at high frequencies, which means smaller and lighter passive and magnetic components. Furthermore, thanks to its ability to sustain high temperatures, HADES® can be located next to the power transistors which reduces parasitic capacitances and inductances, and that further improves the associated losses and delays in the system.
HADES is a reference design and an Evaluation Board delivered with full documentation. It can drive two SiC MOSFET power switches on a DC bus voltage up to 1200V. The Reference design is scalable up to +/-20A gate current, while the Evaluation Board features +/-4A. A specific board flavour for normally-On JEFTs will also be available, and other types of switching devices (normally-On/Off JFETs, BJTs and IGBTs) can be supported with minor changes.