The normally-off 100V GaN transistors span 20 to 80A with very low on resistance. Girvan Patterson, president, explains that a single transistor can be used to deliver 80A, instead of having to use four 20A transistors in parallel. The transistors in the family are the GS61002P (20A/21mΩ), GS61004P (40A/11mΩ), GS61006P (60A/8mΩ ) and GS61008P (80A/5mΩ) and the half-bridge GS71008P (80A/5mΩ).
An island layout allows more drains and sources to be used than is possible with a conventional ‘finger’ layout, explains Patterson. The transistors also feature a reverse current capability, source-sense for optimal high speed design and “exceptionally low” total gate charge (QG) and reverse recovery charge (QRR).
Also at Nuremberg, the company announced another family, of normally-off 650V GaN transistors optimised for high speed system design. The GS66502P (8.5A/165mΩ), GS66504P (17A/82mΩ), GS66506P (25A/55mΩ), GS66508P (34A/41mΩ) and the GS43106L (30A/60mΩ) parts have a reverse current capability, zero reverse recovery charge and source-sense for optimal high speed design.
Both families are RoHS-compliant, and delivered in the company’s embedded GaNPX package which is claimed to minimise inductance and optimise thermal performance.
Applications include high speed DC/DC converters, resonant converters, AC motor drives, inverters, battery chargers and switched mode power supplies.