Power
GaN transistor suits military and civilian radar
A high power GaN transistor from Qorvo delivers >750 W of saturated power from 1.2 to 1.4 GHz for military and civilian L-Band radar systems.
The device is in stock at distributor RFMW.
Efficiency at Psat is 67 to 70% with 17 to 18 dB of gain.
The QPD1028L is capable of CW or pulsed operation with 65 volt bias.
This input-pre-matched device is housed in an industry standard air cavity package.
Product Spotlight
APV1111GVY
Panasonic
Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
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| Stock: | 3490 |
| Cost: | $3.95 |
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