Authorised distributor Richardson RFPD is now offering full design support and availability for two new high-performance GaN RF power transistors from Guerrilla RF – the GRF0020 and GRF0030.
These GaN-on-SiC HEMTs deliver efficiency and bandwidth for demanding RF applications.
The GRF0020 offers a frequency range of DC to 7.0GHz and output power (P3dB) of 30W @ 50V; 19W @ 28V. Saturated gain is 13.5 dB, saturated output power is 45.1 dBm.
The GRF0030 delivers a frequency range of DC to 6.0GHz and output power (P3dB) of 50W @ 50V; 25W @ 28V. Saturated gain is 12.7 dB and saturated output power is 46.6 dBm
Both devices operate on 50V supply rails and support 28V operation for flexibility. They are housed in industry-standard 3 x 3mm QFN-16 surface-mount packages and are also available as bare die: GRF0020D and GRF0030D.
Applications cover cellular infrastructure, radar systems, wireless communications, and test & measurement equipment.
