The devices integrate high-speed gate drivers, electromagnetic interference (EMI) control, and over-temperature and overcurrent protection with an optimised layout to minimise parasitic inductance, maximize dv/dt immunity (CMTI), and reduce board space.
The LMG1020 is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications. The design simplicity of the device enables extremely fast propagation delays of 2.5ns and minimum pulse width of 1ns.
The LMG5200 80V GaN half-bridge power stage provides an integrated power stage solution consisting of two 80 V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.
The LMG3410R070 600V 70mΩ GaN power stage boasts ultra-low input and output capacitance and supports higher currents, temperatures, voltages, and switching frequencies than silicon transistors, while reducing switching losses by up to 80%.
Mouser also stocks a variety of evaluation modules for TI GaN products. The LMG1210EVM-012 evaluates the switching performance of the LMG1210 300V half-bridge driver for GaN FETs.
A small, easy-to-use power stage features an external PWM signal and can be configured as a buck converter, boost converter, or other converter topology using a half bridge.
The LMG1020EVM-006 demonstrates nanosecond laser pulses for high-resolution LiDAR and time-of-flight (ToF) systems using an onboard LMG1020 low-side driver.
The LMG5200 80 V GaN half-bridge power stage is supported by the LMG5200EVM-02 evaluation module. Engineers can use the LMG5200EVM to evaluate the performance of the LMG5200 as a hard-switched converter to sample measurements such as efficiency, switching speed and dv/dt.
Also supporting the LMG5200 module, the BOOSTXL-3PHGANINV evaluation module offers a TI BoosterPack-compatible interface to connect to a TI C2000 MCU LaunchPad development kit.