GaN FET is first to be qualified to 650V

Claimed to have the lowest Rds(on) in a TO-247 package, the TPH3207WS GaN FET was announced at PCIM 2016 by Transphorm

The JEDEC-qualified device has 41mΩ Rds(on) to reduce system volume by as much as 50% without sacrificing efficiency, says the company. Combined with low Qrr (175nC) the company believes it can enable power-dense solutions with reduced component count and improved reliability in high-voltage power conversion applications.

The system reliability, performance and power density in a cascode configuration suit hard-switched bridges and the continuous conduction mode (CCM) bridgeless totem-pole PFC designs that are used in power conversion, such as on-board chargers, solar inverters and telecomms power supplies. Cascode configuration (EZ-GaN) can be driven with off-the-shelf drivers.

The company claims that the FET enables more efficient topologies. It allows designers to reduce overall power supply losses by as much as 40% while achieving up to 99% efficiency by implementing CCM bridgeless totem-pole PFC designs.

Keep Up to Date with the Most Important News

By pressing the Subscribe button, you confirm that you have read and are agreeing to our Privacy Policy and Terms of Use
Previous Post

SiC Schottky has negligible reverse recovery for solar inverters and H/EVs

Next Post

Tiny microbots can clean up water