The high power density eGaN (enhancement-mode gallium nitride) FET measures 1.82mm2 but delivers 80VDS, 6.8A with a maximum RDS(on) of 22mΩ with 5Vapplied to the gate.
The high switching capability transistor can be used for high frequency power conversion applications, such as synchronous rectification, Class-D audio, high voltage buck converters, wireless charging, and pulsed power (LiDAR) applications, which is used in emerging applications such as driverless vehicles and augmented reality.