Developed to operate at higher switching frequencies, the FDPC8011S consists of a 1.4mΩ SyncFETTM technology and a 5.4mΩ control, low-figure of merit N-Channel MOSFET integrated in an all-clip package, which helps reduce the capacitor count and inductor size in synchronous buck applications. The device’s source down, low–side allows for simple placement and routing, enabling a more compact board layout and achieving optimal thermal performance. The FDPC8011S delivers over 25A output current and has a 2X output current capacity improvement over other conventional 3x3mm2 dual MOSFETs.
Features and Benefits:
•Control N-Channel MOSFET with RDS(ON) = 5.4mΩ Typical, (7.3mΩ Max) at VGS = 4.5V
•Synchronous N-Channel MOSFET with RDS(ON) = 1.4mΩ Typical, (2.1mΩ Max) at VGS = 4.5V
•Low inductance packaging shortens rise/fall times, resulting in lower switching losses
•MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
•RoHS-compliant
This 3.3×3.3mm2 Power Clip Asymmetric Dual MOSFET is part of Fairchild Semiconductor’s comprehensive portfolio of advanced MOSFET technology that provides power designers with a wide range of solutions for mission critical high efficiency information processing designs.
Price: US $1.60 in 1,000 quantity pieces
Availability: Samples available upon request.
Delivery: 8-12 weeks ARO