Fairchild's N-Channel MOSFET Series Offers 90% Higher ESD

16th August 2007

ES Admin

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Fairchild Semiconductor has introduced a new series of high-efficiency N-channel MOSFETs that boast up to 8kV ESD (HBM) voltage protection ––90 percent higher than existing devices on the market. The FDS881XNZ series support the latest architectures for battery pack protection applications such as notebook and cell phones. Utilizing Fairchild’s Power Trench® process, these low-RDS(ON) MOSFETs, including the FDS8812NZ with RDS(ON) of less than 5mOhms, reduce conduction losses and extend valuable battery life. They also provide rugged and robust avalanche and high peak current capability to ensure system safety by surviving unexpected voltage spikes that may afflict battery packs.

The FDS881XNZ series offers design engineers a variety of options that they can select depending on their battery application’s power management and load switching requirements. The FDS8812NZ
(RDS(ON) = 4 mOhm) targets high-end laptops by addressing the thermal challenges resulting from incorporating high levels of functionality into notebook computers. The FDS8813NZ (RDS(ON) = 4.5mOhm) is best suited for all-in-one laptops featuring displays over 15”, while the FDS8817NZ
(RDS(ON) = 7mOhm) is ideal for general use in low- to mid-tier models, as well as sub-notebook PCs.