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30V MOSFET in Power 56 Package is First to Break the 1mOhm MAX RDS(ON) Barrier says Fairchild

4th September 2009

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Fairchild Semiconductor brings designers of servers, blade servers and routers the industry’s first sub-one mOhm 30V MOSFET in a Power 56 package. This 30V MOSFET, the FDMS7650, functions as a load switch or an ORing FET. In server farms, these ORing FETs are used when many power supplies are arranged in parallel to share the load.

Dissipating less power and delivering higher efficiency is criticalfor the overall efficiency of these server farms because the FETs are continually on. The FDMS7650 is the first in Power56 packaging to break the 1mOhm barrier with a MAX RDS(ON) of only 0.99mOhm, reducing conduction losses and improving the overall efficiency of the application. This 30V MOSFET can deliver the same total RDS(ON) with half the number of FETs. As an example, in a typical application using 2.0mOhm MOSFETs, the solution would require twice the number of FETs.

The FDMS7650 is able to achieve this groundbreaking RDS(ON) through Fairchild's advanced-performance PowerTrench MOSFET technology. This technology yields an exceptionally low RDS(ON), total gate charge (QG) and Miller Charge (QGD) – enhancements that result in high efficiency by minimizing conduction and switching losses.

This power MOSFET is one of Fairchild’s many MOSFETs that offer compelling advantages in power designs. Good examples are Fairchild’s 30V Dual N-Channel MOSFETs, the FDMC8200 and FDMS9600. The FDMC8200 typically features an RDS(ON) of 24mOhm on the high side and 9.5mOhm on the low side, enhancing efficiency in DC-DC applications. The FDMS9600 offers synchronous Buck applications, an optimal power stage through low switching losses on the high side MOSFET and low conduction losses on the low side SyncFET MOSFET.