The FDMA6023PZT is packaged in an ultra-thin, lead-frame exposed MicroFET package with an excellent thermal resistance, delivering superb power dissipation and reducing conduction losses compared to conventional MOSFETs. This device is designed with Fairchild’s advanced-performance PowerTrench® MOSFET process technology. This technology yields exceptionally low values for RDS(ON), total gate charge (QG) and Miller Charge (QGD) – enhancements that result in superior conduction and switching performance.
FSEZ1216 and FAN102 product imageThe FDMA6023PZT is part of a comprehensive portfolio of MicroFET MOSFETs that are pivotal in addressing the power design challenges in today’s feature-rich portable applications. This portfolio includes the FDMA1027PT, a 20V P-Channel PowerTrench MOSFET, and the FDFMA2P853T, a 20V P-Channel PowerTrench MOSFET with a Schottky diode. These products are 55 percent smaller and 50 percent lower in height than 3mm x 3mm x 1.1mm MOSFETs typically used in low-voltage designs.