This compact gallium nitride (GaN) enhancement-mode (e-mode) half-bridge evaluation board packs some notable features while reducing the overall number of components and saving valuable board space.
The board features two HEY1011-L12C GaN FET drivers and two 650 V, 60 A GaN e-mode transistors arranged in a half-bridge configuration.
The HEY1011 is an isolated gate driver optimised for driving GaN FETs with fast propagation delay and high peak source/sink capability for use in high-frequency applications that require isolation, level-shifting or ground separation for noise immunity.
Since the HEY1011 driver does not need secondary side power or bootstrap components, it frees up valuable board space and makes for a more cost-effective design.
To help alleviate the effects of gate-drain capacitor currents, the GS-EVB-HB-0650603B-HD uses a bipolar gate drive arrangement. The board can perform double pulse tests or connect a half-bridge to an existing LC power segment.
The double pulse test is safely used to evaluate the switching characteristics of a power switch under hard switching conditions
