Taiwan Semiconductor’s new Dual N-Channel Power MOSFETs in PDFN56 Dual package (TSM110NB04DCR, TSM150NB04DCR, TSM250NB06DCR, TSM300NB06DCR) deliver improved power density. The MOSFETs are available with 40V/60V breakdown voltages 25 to 38A current ratings and an RDSon of 15 to 30mΩ. The maximum junction temperature is 150°C.
Thanks to a low gate charge, fast switching frequencies are possible. All MOSFETS are avalanche and Rg tested. They have a very low on-resistance to minimise conduction losses, meet RoHS requirements and are halogen-free. Applications include BLDC motor control, battery power management, DC/DC converter and secondary synchronous rectification.
