Dual MOSFET combi saves space without performance compromise
Diodes Incorporated has put a complementary pair of 100V enhancement mode MOSFETs into an SO8 package achieving the same performance of much larger individually packaged parts. The ZXMC10A816 is aimed at H-bridge circuits in DC fan and inverter circuits, Class D amplifier output stages and an array of other 48V applications.Enab
The N- and P-channel MOSFETs used in the dual device package exhibit low gate charge and typical RDS(ON) of respectively 230mΩ and 235mΩ at VGS of 10V, ensuring switching and on state losses are minimised. 2.4W and 2.6W are respective power dissipation figures.
The ZXMC10A816 complementary dual MOSFET package is priced at US $0.28 in 10K piece quantities.