Power

Dual MOSFET combi saves space without performance compromise

9th June 2009
ES Admin
Diodes Incorporated has put a complementary pair of 100V enhancement mode MOSFETs into an SO8 package achieving the same performance of much larger individually packaged parts. The ZXMC10A816 is aimed at H-bridge circuits in DC fan and inverter circuits, Class D amplifier output stages and an array of other 48V applications.
Enabling designers to replace equivalent devices in SOT223 and DPak (TO252) packages, the N- and P-channel MOSFET combination reduces board space and component count and simplifies gate drive circuit layouts. As an illustration of its space saving potential, the SO8 package’s footprint of just 31mm2 is for example 30% that of two SOT223 MOSFETs.

The N- and P-channel MOSFETs used in the dual device package exhibit low gate charge and typical RDS(ON) of respectively 230mΩ and 235mΩ at VGS of 10V, ensuring switching and on state losses are minimised. 2.4W and 2.6W are respective power dissipation figures.

The ZXMC10A816 complementary dual MOSFET package is priced at US $0.28 in 10K piece quantities.

Featured products

Upcoming Events

View all events
Newsletter
Latest global electronics news