The resulting cooler running and space saving advantages of the MOSFETs coupled with an off-board height of only 0.4mm makes them particularly well suited to thin profile portable consumer electronics, including tablet PCs and smart phones. Both n-channel and p-channel devices are initially being offered by Diodes with breakdown voltage ratings of 20V, 30V and 60V for use in a variety of high reliability load switching, signal switching and boost conversion applications.
The 20V rated DMN2300UFB4 n-channel MOSFET for example displays an Rdson performance of just 150m?, more than 50% lower than competing solutions, helping to dramatically reduce conduction losses and power dissipation. Its p-channel companion, the 20V rated DMP21D0UFB4 offers a similar class-leading performance. Electrostatic discharge ratings of these MOSFETs is also high, at respectively 2kV and 3kV.
The DMN2300UFB4 n-channel MOSFET is priced at $0.1 each in 10k quantities, the DMP21D0UFB4 p-channel MOSFET at $0.11 each in 10k quantities.