The MwT-PH8F AlGaAs/InGaAs pHEMT delivers 30 dBm Psat at 12 GHz and is ideally suited to applications requiring high-gain and medium linear power up to 18 GHz.
Small signal gain is 11 dB.
Offered in a 670 x 315 micron chip, the MwT-PH8F can be used in military and hi-rel SWaP designs with MTBF values better than 1×108 hours at 150 degrees C channel temperature.