DIOFETs raise efficiency and increase reliability of PoL converters

With typical RDS(ON) ratings of only 10m and 8.5m respectively at VGS of 10V, these devices minimize the conduction losses traditionally associated with low side MOSFETs. At the same time, the forward voltage of the DIOFET’s integrated Schottky diode, is 25% lower than comparable MOSFET/Schottky solutions and 48 percent lower than that of the intrinsic body diode of a typical MOSFET, thereby minimizing switching losses and improving efficiency. The low QRR of DIOFET’s integrated Schottky and its softer reverse recovery characteristics further contribute towards minimizing body diode switching losses.

In benchmark tests, the DIOFETs operate at a temperature that is 5% lower than that of competing solutions. As every 10oC reduction in MOSFET junction temperature doubles lifetime reliability the lower operating temperature of the DIOFETs significantly increases the reliability of the PoL converter.