Power

DC/DC converters with bipolar outputs for gate drivers

27th May 2021
Alex Lynn
0

Murata has added to its expansive range of advanced power solutions, with a new series of surface mount DC/DC converters. Comprising nine different models, the lightweight units in the MGJ2 series each have a two watt power rating and are supplied in compact, low-profile form factor modules with 19.49x14.99x4.39mm dimensions.

They are intended to accompany the IGBT and SiC-based MOSFET high-voltage gate drivers used in industrial, renewable energy and mobility applications. Available in input versions that accommodate the commonly-used five volt (in development), 12 and 15V voltage rails, they feature +15V/-5V, +15V/-9V and +20V/-5V bipolar outputs.

The new MGJ2 DC-DC converters exhibit an ultra-low isolation capacitance of just 3pF (typical). This helps them to mitigate the coupling of transients across the isolation barrier and prevent EMI issues from occurring due to circulating currents generated by high frequency signals.

Their characterised partial discharge performance means that elevated levels of operation can be maintained despite the demanding nature of the high-voltage applications they will be used in. Likewise, the common-mode transient immunity (CMTI), which exceeds 200 kV/µs, allows them to deal with high switching frequencies.

Other key attributes of the MGJ2 units include a continuous barrier that withstands voltage that reaches 2.5kV (also tested to cope with 5.7k VDC for a one minute period), plus 9mm creepage and clearance separation distances. An extended operational temperature range of -40 to +100˚C is supported, and they have built-in short circuit protection mechanisms too. UL62368 compliance (for 250 VAC reinforced insulation) has already been secured, with ANSI/AAMI ES60601-1 certification currently pending.

These DC/DC converters are intended for implementation within industrial motor drives, solar and wind turbine inverters, uninterruptible power supplies (UPSs) and fast EV charging stations.

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