Power

DC/DC converter is optimised for IGBT, SiC and MOSFET drives

14th September 2016
Caroline Hayes

Isolated 6W dual output DC/DC converters from Murata Power Solutions are optimised to suit the bipolar voltages required for high-side and low-side IGBT, SiC and MOSFET gate drive applications. The MGJ6 series is available in SIP, DIP and a low profile surface mount package format.

Isolated 6W dual output DC/DC converters from Murata Power Solutions are optimised to suit the bipolar voltages required for high-side and low-side IGBT, SiC and MOSFET gate drive applications. The MGJ6 series is available in SIP, DIP and a low profile surface mount package format.

The series comprises wide input voltages with nominals of 5.0, 12, or 24V DC and +15/-5, +15/-10 or +20/-5V DC outputs. They are suitable for low to medium power applications that require a DC link voltage up to 3kV DC. Asymmetric outputs provide optimum drive levels to maintain a high system efficiency with low EMI levels, says the company. The low coupling capacitance, typically 15pF, reduces EMI coupling through the converter.

The series has a characterised dV/dt immunity of 80kV/us minimum at 1.6kV, claimed to contribute to a high degree of reliability in fast switching drive systems. Also included is characterised partial discharge performance, described as crucial to achieving a long service life in high performance applications.

Certification to safety standard UL60950 for reinforced insulation and the medical 3rd edition safety standard ANSI/AAMI ES60601-1 for 2 MOOPs and 2 MOPPs is pending. Creepage and clearance of 8mm, allows the converters to satisfy safety agency requirements for extra high working voltages.

Short circuit and overload protection features are standard across the range and a frequency synchronisation/enable input pin can simplify EMC filter design.

Visit Murata at electronica 2016: Hall A2 – 547

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