The model enables circuit designers to reap the benefits of SiC, including switching frequencies up to 10 times higher than IGBT-based solutions, which enables smaller magnetic and capacitive elements and subsequently shrinks the overall size, weight, and cost of power electronics systems.
To take full advantage of all the benefits of SiC technology, power converters must be redesigned specifically for SiC devices. SiC MOSFETs have significantly different characteristics than silicon devices, and thus require SiC-specific models for accurate circuit simulations.
Cree’s behaviour-based and temperature-dependent SPICE model delivers accurate simulation results without compromising speed and includes self-heating and transient thermal capabilities. Valid for junction temperatures spanning 25°C to 150°C, the model allows power electronics design engineers to reliably simulate the advanced switching performance of Cree C2M products.