SPICE model delivers SiC MOSFET benefits

15th October 2014
Mick Elliott

A new SPICE model introduced by Cree increases the design-in support for the C2M Series SiC MOSFET power devices and demonstrates the benefits of Cree SiC MOSFETs—including the new C2M0025120D device, which recently shattered the on-resistance barrier by delivering 1200V of blocking voltage with an on-resistance of only 25mOhms—in circuit simulations.

The model enables circuit designers to reap the benefits of SiC, including switching frequencies up to 10 times higher than IGBT-based solutions, which enables smaller magnetic and capacitive elements and subsequently shrinks the overall size, weight, and cost of power electronics systems.

To take full advantage of all the benefits of SiC technology, power converters must be redesigned specifically for SiC devices. SiC MOSFETs have significantly different characteristics than silicon devices, and thus require SiC-specific models for accurate circuit simulations.

Cree’s behaviour-based and temperature-dependent SPICE model delivers accurate simulation results without compromising speed and includes self-heating and transient thermal capabilities. Valid for junction temperatures spanning 25°C to 150°C, the model allows power electronics design engineers to reliably simulate the advanced switching performance of Cree C2M products.

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