Compact MOSFETs suit power management applications
Designed to meet the high-current charging requirements of the latest mobile devices, Toshiba introduce the SSM6K781G N-channel and SSM6J771G P-channel ultra-compact MOSFETs in wafer level chip scale packages measuring just 1.5x1.0mm and rated for power dissipation of up to 1.2W.
With a size and power handling capability ratio which is superior to mold type packages, this WCSP6C package is the optimum choice in applications with minimum available board space. Therefore, the MOSFETs are suitable for power switching in charging circuits for the latest tablets, mobile phones and other space-constrained portable devices where high currents are required to minimise charge times.
Combining low on resistance of 14.4mΩ (VGSS = 4.5V) with a very low capacitance, the N-channel SSM6K781G can be used in battery charging and DC/DC converter architectures. Also suited for these architectures, the P-channel SSM6J771G offers low on resistance of 26mΩ (VGSS = -4.5V) and very low capacitance.
The SSM6K781G MOSFET has a maximum DC current rating of 7A. Additionally suitable for dual-cell charging applications, the SSM6J771G can handle up to -5A and has a maximum gate source voltage rating of VGSS = ±12V.
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