Cambridge GaN devices announces new Webinar series
Cambridge GaN Devices (CGD) is presenting a new series of webinar tutorials, targeting designers, engineers and managers who are evaluating gallium nitride (GaN) power devices for their next activity. During this series, CGD's GaN experts will share their insights on GaN for efficient power conversion and how CGD's HV technology, ICeGaN, enables ease of use and delivers the highest performance. In the first instalment, 'Powering up The Future with GaN', Andrea Bricconi, Chief Commercial Officer, CGD will introduce the basics of GaN, and position it in relation to traditional silicon solutions and silicon carbide (SiC), highlighting the potential benefits of broad adoption of GaN.
Bricconi says: "The many advantages of GaN in power electronics - especially efficiency and power density - have been extensively reported on. But people in all positions will rightly have questions about GaN and how they can best utilise it in their designs. This tutorial series will address all these points and provide a forum for discussion."
Following an overview of the impact GaN brings in improving energy efficiency the contribution it can make to environmental sustainability, attendees to the webinar on 9th of February 5pm to 5:50pm GMT, will learn about the concepts behind the different GaN technologies currently available. There will also be a short introduction to CGD and its portfolio, including the ICeGaN series - industry's first easy-to-use and scalable 650V GaN HEMT family. These ICs are single-chip eMode HEMT devices that can be driven like a MOSFET, without the need for special gate drivers, complex and lossy driving circuits, negative voltage supply requirements or additional clamping components. Devices are extremely reliable and rugged, suitable for demanding applications environments. A Q&A session will follow.