It is in stock at distributor Digi-Key.
The integrated 600 mΩ high-side and 300 mΩ low-side power MOSFETs provide high-efficiency step-down conversion.
It adopts peak-current mode control with an integrated loop compensation network to minimise the external component count, making it easy to design-in and use.
The AP64060Q design is optimised for EMI reduction.
The device has a proprietary gate driver design to resist switching node ringing without sacrificing MOSFET turn-on and turn-off times.
This reduces high-frequency radiated EMI noise caused by MOSFET switching.
The AP64060Q is available in a TSOT26 package.
Features
- High switching frequency of 2.2 MHz
- Delivers reduced solution footprint beyond MW band frequency
- Wide 4.5 V to 40 V input voltage range
- Works across the full automotive voltage range, including load dump
- Low (90 µA) quiescent current and 1 µA shutdown current
- Enables systems to meet <100 µA standby requirements of many automotive applications
- Available in a TSOT26 package type
- Maintains a small footprint and is industry-standard