Power

Bipolar transistors enable higher power density

4th March 2019
Alex Lynn

Global manufacturer and supplier of products within the broad discrete, logic, analog and mixed-signal semiconductor markets, Diodes Incorporated, has announced a family of NPN and PNP power bipolar transistors in a small form factor offering increased power density for applications requiring up to 100V and three amps.

Featuring a smaller form factor, these NPN and PNP transistors enable higher power density designs in gate-driving power MOSFETs and IGBTs, linear DC/DC step-down regulators, PNP LDOs, and load switch circuits.

Targeted at both industrial and consumer markets, the DXTN07xxxxFG (NPN) and DXTP07xxxxFG (PNP) series range from 25 to 100V VCEO; they also feature total power dissipation of two watts and are rated up to +175°C operation. The transistors are housed in the compact PowerDI3333 surface mount package measuring just 3.3x3.3x0.8mm, occupying 70% less PCB space than the traditional SOT223, while delivering similar power dissipation in a more thermally efficient package.

The PowerDI3333 package increases PCB throughput by featuring wettable flanks, which help facilitate the high-speed, automatic optical inspection (AOI) of solder joints, thus eliminating the need for X-ray inspection.

The full range of DXTN07xxxxFG and DXTP07xxxxFG devices are sampling commercially with automotive qualification to be completed by end of Q1 2019. They are priced at $0.19 each in 5,000 piece quantities.

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