Ultra-small P-channel enhancement-mode power MOSFETs
Advanced Power Electronics has today announced the introduction of a new P-channel enhancement-mode power MOSFET, the AP2325GEU6-HF-3, which is well-suited for use in applications such as load switches. Combining fast switching, low on-resistance and cost-effectiveness, the AP2325GEU6-HF-3 is simple to use and has a low gate charge.
It features a minimum Drain-Source Breakdown Voltage (BVDSS) of -20V, maximum RDS(ON) of 145mohms, and a maximum Continuous Drain Current (ID) at 25degC of -1.8A.
Ralph Waggitt, President/CEO, Advanced Power Electronics, commented: “These Advanced Power MOSFETs are available in the popular RoHS/REACH-compliant, halogen-free SOT-363 ultra-small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required.”
AP2325 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. SOT-363 package is ultra-small surface mount package and lead free RoHS compliant.
Key features:
- Simple Drive Requirement
- Small Package Outline
- Surface Mount Device
- RoHS Compliant & Halogen-Free
- Vds: -20V
- Vgs: ±12V
- Configuration: Single P
- Package: SOT-363
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