Power

Active OR-ing MOSFET controller features 200V rating

26th July 2016
Nat Bowers
0

An active OR-ing MOSFET controller, suited for power systems that use redundancy to achieve high reliability in telecomms, data centre and server applications, has been introduced by Diodes Incorporated. The ZXGD3111N7 increases performance with a 200V maximum drain voltage, from the previously announced 40V ZXGD3108N8, allowing it to address requirements in 48V common rail systems where the outputs of two or more power supplies are OR’ed together in order to provide redundancy.

In addition to its 200V rating, which is twice that of its competitors, the ZXGD3111N7 has a low turn‑off threshold voltage with a tight tolerance of -5 to -1mV. This improves stability under light load conditions when using low RDSON MOSFETs, making this controller a class-leading solution that can deliver the highest efficiency and reliability over the entire load range.

The ZXGD3111N7 is designed to work with a FET to create an ideal diode that replaces the blocking diodes typically used in common rail designs. A 5A sink current capability allows fast discharge of the gates in the parallelled OR’ing MOSFETS and its quick (less than 600ns) turn-off specification avoids reverse current flow and any voltage drop on the common rail. The device has an industry-leading standby power consumption under 50mW with a quiescent supply current of less than 1mA.

The ZXGD3111N7 in an SO-7 package is priced at $1.10 each in 2,500 unit quantities.

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